| PART |
Description |
Maker |
| 310-025105-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| FH102 1282 |
High-Frequency Low-Noise Amp/ Differential Amp Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amp, Differential Amp Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SC5433 2SC5433-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
| 2SC3351-T2B 2SC3351-T1B |
For amplify low noise and high frequency.
|
NEC
|
| 2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER
|
UTC
|
| 2SC3356L-X-AE3-R 2SC3356-X-AE3-R 2SC3356G-X-AE3-R |
HIGH FREQUENCY LOW NOISE AMPLIFIER
|
Unisonic Technologies
|
| CPH602012 |
High-Frequency Low-Noise Amplifier
|
Sanyo Semicon Device
|
| 2SC3356 |
HIGH FREQUENCY LOW NOISE AMPLIFIER
|
Unisonic Technologies
|
| 2SC3356 |
HIGH FREQUENCY LOW NOISE AMPLIFIER
|
UTC
|
| 2SC5379 |
SILICON NPN EPITAXIAL PLANER TYPE(FOR LOW-VOLTAGE LOW-NOISE HIGH-FREQUENCY OSCILLATION)
|
Panasonic Corporation
Panasonic Semiconductor
|
